Method of driving a thin film transistor type optical sensor and

Details Method of driving a thin film transistor type optical sensor and Method of driving a thin film transistor type optical sensor and

1992-11-24

1994-06-28

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

257448, H01J 4014

Patent

active

053249283

ABSTRACT:
The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode.
The thin film transistor type optical sensor is driven by providing the gate electrode with a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor or a voltage based on the threshold voltage.

REFERENCES:
patent: 4886977 (1989-12-01), Gofuku et al.
patent: 4945418 (1990-07-01), Mutoh
patent: 4980546 (1990-12-01), Berger
patent: 5057889 (1991-10-01), Yamada et al.
patent: 5184007 (1993-02-01), Sakai et al.
The Japan Society Of Applied Physics, Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Aug. 27, 1987, pp. 509-510, Saika, T., et al.: "Integrated a-Si:H Linear Image Sensor Using TFT Type Photo-Sensor."

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