Fishing – trapping – and vermin destroying
Patent
1990-12-05
1994-06-28
Fourson, George
Fishing, trapping, and vermin destroying
437931, H01L 21265
Patent
active
053246772
ABSTRACT:
A semiconductor nonvolatile memory device of the gate insulating type is comprised of a semiconductor substrate, an electrically erasable programmable memory cell having a gate oxide film disposed on the substrate, a floating gate electrode formed on the gate oxide film, and a control gate electrode formed in the substrate under the gate oxide film and separated from the floating gate electrode through the gate oxide film so as to control potential level of the floating gate electrode to effect writing and erasing operation of the memory cell, and a peripheral circuit including a transistor of the gate insulating type having another gate oxide film disposed on the same substrate and formed concurrently with the first mentioned gate oxide film.
REFERENCES:
patent: 4019197 (1977-04-01), Lohstroh et al.
patent: 4288863 (1981-09-01), Adam
patent: 4300212 (1981-11-01), Simko
patent: 4404577 (1983-09-01), Cranford et al.
patent: 4516313 (1985-05-01), Turi et al.
patent: 4616245 (1986-10-01), Topich et al.
patent: 4727043 (1988-02-01), Matsumoto et al.
patent: 4816894 (1989-03-01), Hattori
patent: 4851361 (1989-07-01), Schumann et al.
Patent Abstracts of Japan, vol. 10, No. 129 (E-103) [2186] May 14, 1986.
Adams Bruce L.
Booth Richard A.
Fourson George
Seiko Instruments Inc.
Wilks Van C.
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