Piezoresistive pressure sensor with sculpted diaphragm

Details Piezoresistive pressure sensor with sculpted diaphragm Piezoresistive pressure sensor with sculpted diaphragm

1998-08-31

1999-12-28

Felber, Joseph L.

Measuring and testing

Fluid pressure gauge

Diaphragm

73726, 338 42, G01L 906

Patent

active

060066075

ABSTRACT:
The present invention is a semiconductor pressure sensor. In one embodiment, the semiconductor pressure sensor includes a diaphragm having a first thickness and at least cone raised boss that is coupled to a first side of the diaphragm. The at least one raised boss increases the diaphragm thickness in the region occupied by the at least one raised boss to a second thickness. A plurality of piezoresistors are disposed on a second side of the diaphragm in regions of the first thickness. In another embodiment, a semiconductor pressure sensor diaphragm includes at least one raised boss disposed along a central axis on a first side of the diaphragm. At least two raised bridge regions are disposed along the central axis, interconnecting the at least one raised boss and a diaphragm edge. Each raised bridge region is narrower than the raised boss. A plurality of piezoresistors are disposed on the raised bridge regions of the diaphragm along the central axis.

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