Method of growing a compound semiconductor film

Details Method of growing a compound semiconductor film Method of growing a compound semiconductor film

1993-04-08

1995-04-04

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 88, 117 89, C30B 2502

Patent

active

054027489

ABSTRACT:
A method of fabricating a semiconductor device comprises the steps of growing a first layer of a group III-V compound semiconductor material on a substrate by a vapor phase deposition process by setting the temperature at a first temperature, raising the temperature from the first temperature to a second, higher temperature, growing a second layer of a group III-V compound semiconductor material on the first layer, wherein the step of raising the temperature is conducted while supplying a source gas for the group V element under a condition, determined in terms of a total pressure and a partial pressure of the source gas, such that the condition falls within a region defined by a first condition wherein the total pressure is set to 76 Torr and the partial pressure is set to 0.35 Torr, a second condition wherein the total pressure is set to 760 Torr and the partial pressure is set to 0.6 Torr, a third condition wherein the total pressure is set to 760 Torr and the partial pressure is set to 5.7 Torr, and a fourth condition wherein the total pressure is set to 76 Torr and the partial pressure is set to 1.3 Torr.

REFERENCES:
patent: 3928092 (1975-12-01), Ballamy et al.
patent: 3963539 (1976-06-01), Kemlage et al.
patent: 4659401 (1987-04-01), Reif et al.
patent: 5035767 (1991-07-01), Nishizawa

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