Tunable infrared detector with narrow bandwidth

Details Tunable infrared detector with narrow bandwidth Tunable infrared detector with narrow bandwidth

1978-02-06

1979-03-13

Edlow, Martin H.

357 16, H01L 2714

Patent

active

041445406

ABSTRACT:
An infrared detector with narrow band tunable response. The detector is cosed of four layers of epitaxially grown material that is doped for selective wavelength absorption. The uppermost layer has a thickness much larger than the penetration depth of short wavelength radiation or the diffusion length of photo generated carriers near the surface. The upper layer is a heavily N-doped layer over a P-doped layer. The cut-on wavelength edge is determined by the amount of doping in the uppermost layer. By applying a reverse bias to this N-P junction, the cut-off absorption edge can be shifted to longer wavelengths.

REFERENCES:
patent: 3821777 (1974-06-01), James
patent: 3978511 (1976-08-01), Digoy
patent: 4083062 (1978-04-01), Ohuchi

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