Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1992-02-27

1994-10-18

Hearn, Brian

Fishing, trapping, and vermin destroying

437203, 437234, 437912, 148DIG131, H01L 21265

Patent

active

053568230

ABSTRACT:
A semiconductor layer undergoes isolation etching and gate recess etching, using a side wall insulating layer having the shape of a forward taper as a mask, by means of the anisotropic etching technique. The shape of the side wall of the semiconductor layer corresponds to that of the forward taper of the mask. The shape of the forward taper is always constant, irrespective of face orientation of crystal of the semiconductor layer. Since the taper angle of the side wall insulating layer can freely be set within a predetermined range in accordance with conditions, the taper angle of the semiconductor layer can be controlled. The design margin of an electrode wiring pattern is greatly improved. Since the side wall of a gate recess is stably formed in the shape of a forward taper, the side wall insulating layer can be formed on the surface of the forward taper and thus a gate electrode layer can be formed so as to have a T-shaped cross section. Therefore, the gate resistance can be greatly reduced.

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IBM Technical Disclosure Bulletin, vol. 22, No. 11, Apr. 1980, pp. 4883-4885; "Method For Controlling via Sidewall Slope", Chang et al.
Wolf et al. "Silicon Processing for the VLSI Era"; vol. 1, 1986, pp. 539-542.

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