Gate turn-off thyristor for reducing the on current thereof

Details Gate turn-off thyristor for reducing the on current thereof Gate turn-off thyristor for reducing the on current thereof

1977-04-04

1979-10-02

Clawson, Jr., Joseph E.

357 36, 357 51, 357 55, H01L 2974

Patent

active

041700201

ABSTRACT:
The invention discloses a gate controlled semiconductor device in which a gate electrode is substantially divided into many pieces. And the semiconductor device comprises a semiconductive element having at least one P-N junction formed by at least a pair of P-type diffusion regions and N-type diffusion regions, a cathode assembly including a metallic layer deposited on a cathode-emitter layer formed on a surface of said semiconductive element, an anode electrode assembly and gate electrode assemblies which includes a plural separated metallic layers provided around the cathode electrode assemblies of the cathode-emitter layer.

REFERENCES:
patent: 4012761 (1977-03-01), Ferro et al.
patent: 4092703 (1978-05-01), Sueoka et al.

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