Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-10-31
1986-12-16
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29576E, 29578, 29580, 148175, 148 15, 148DIG26, 148DIG50, 148DIG85, 156647, 156649, 156653, 156657, 204 345, 2041291, 2041293, H01L 21306, H01L 2176
Patent
active
046285911
ABSTRACT:
Full oxide isolation of epitaxial islands can be accomplished by oxidizing suitably porous silicon. The porous silicon can be created by anodizing highly doped n+ silicon in hydroflouric acid. Lesser doped epitaxial regions will not become porous and will become isolated islands suitable for the fabrication of semiconductor devices.
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Holmstrom et al, "Complete Dielectric Isolation by Highly Selective and Self-Stopping Formation of Porous Silicon", Appl. Phys. Lett., 42(4) pp. 386-388, 2/15/83.
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Imai et al., "Full Isolation Technology by Porous Oxidized Silicon and Its Application to LSI", IDEM, pp. 376-379, 1981.
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Spratt David B.
Zorinsky Eldon J.
Bachand Richard A.
Merrett N. Rhys
Saba William G.
Sharp Melvin
Texas Instruments Incorporated
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