Molybdenum-metal mask for definition and etch of oxide-encapsula

Metal working – Method of mechanical manufacture – Assembling or joining

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Details

29578, 29591, 148DIG105, 148DIG106, 156656, H01L 21283, H01L 21308

Patent

active

046285881

ABSTRACT:
A molybdenum mask is used instead of a photoresist mask in defining and etching an oxide-encapsulated molybdenum gate in a VLSI manufacturing method. The molybdenum mask is first defined by a photoresist mask, then the photoresist is removed, leaving the molybdenum mask. A long over etch can then be tolerated so that oxide filaments can be avoided; this would be otherwise unreliable due to damage to photoresist during the over etch.

REFERENCES:
patent: 3698078 (1972-10-01), Redington
patent: 4453306 (1984-06-01), Lynch et al.

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