Semiconductor laser with facet protection film of selected refle

Details Semiconductor laser with facet protection film of selected refle Semiconductor laser with facet protection film of selected refle

1988-03-30

1989-07-25

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

048521124

ABSTRACT:
A semiconductor laser includes a facet protection film consisting of an Al.sub.2 O.sub.3 film of optical length .lambda./4 and a SiO.sub.2 film of optical length .lambda./4 produced on the Al.sub.2 O.sub.3 film, and the facet reflectivity takes a value with in 21.+-.3%.

REFERENCES:
patent: 4178564 (1979-12-01), Ladany et al.
Born et al, "Principles of Optics", Pergamon Press, Third Revised Edition, 1965, pp. 55-70.
Hammer, "Closed Form Theory of Multicavity Reflectors and the Output Power of External Cavity Diode Lasers", IEEE, 1984, pp. 1252-1258.

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