Monolithic integrated circuit equivalent to a transistor associa

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307300, 307315, 307562, 307565, 357 33, 357 64, 357 86, H01L 2706, H01L 2972, H01L 29167, H03K 1704

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active

044829116

ABSTRACT:
A monolithic integrated circuit equivalent to a transistor associated with three antisaturation diodes and a method of fabrication of the circuit comprising an npn structure which is substantially identical with a Darlington circuit. The upper portion of the structure is treated so as to reduce the current gain to values lower than 1 in regions other than the emitter region. A gain lower than unity is thus obtained in the case of the input transistor.

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patent: 4293868 (1981-10-01), Iizuka et al.
Mikoshiba, IEEE J. of Solid State Circuits, vol. SC 13, No. 4, Aug. 1978, pp. 483-489.
Berger et al., IBM Tech. Discl. Bulletin, vol. 15, No. 4, Oct. 1972, p. 1625.

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