Thick extended contact photoconductor

Details Thick extended contact photoconductor Thick extended contact photoconductor

1982-07-19

1984-11-13

Envall, Jr., Roy N.

Electrical resistors

Resistance value responsive to a condition

Photoconductive

338 17, 250211J, H01L 3108

Patent

active

044828810

ABSTRACT:
A semiconductor photoconductor having low impedance nonmetallic contacts is disclosed which has increased detectivity over prior art photoconductor structures. The improved photoconductor has metallic contacts that are separated by a contact length that is greater than the optical length of the detector. The contact regions of the semiconductor adjacent the detector region are thicker than the detector region. The process for fabricating the photoconductor includes thinning the detector region to an appropriate thickness while preserving the greater thickness of the contact regions.

REFERENCES:
patent: 3523188 (1970-08-01), Kazan et al.
patent: 3968360 (1976-07-01), Monnier
patent: 3988612 (1976-10-01), Palmer
patent: 4025793 (1977-05-01), Shaw et al.
patent: 4307372 (1981-12-01), Matsui et al.
Kinch et al., "Geometrical Enhancement of HgCdTe Photoconductive Detectors", Infrared Physics, 1977, vol. 17, pp. 137-145.

Affiliated with

Also associated with

Rating

Thick extended contact photoconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thick extended contact photoconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thick extended contact photoconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2363250