Insulated gate field effect transistor with vertical channel

Details Insulated gate field effect transistor with vertical channel Insulated gate field effect transistor with vertical channel

1987-12-01

1989-07-25

James, Andrew J.

357 56, 357 38, H01L 2978, H01L 2906

Patent

active

048518891

ABSTRACT:
A conductivity modulated type field effect transistor, having a drain region of a first conductivity type with an associated drain electrode, a conductivity modulating region of a second conductivity type opposed to that of the drain region, a channel region of the first conductivity type and a source region of the second conductivity type formed consecutively on top of one another. The channel forming region has a low resistance layer of the same conductivity type formed in the middle of the region such that small portions of the channel forming region of higher resistance are left intact at the sides of the region, and the source region penetrates into the channel forming region at the sides of the region adjacent to the low resistance layer. The length of the conductivity modulating region and drain region is such that they protrude beyond the channel forming region, and a gate insulating film is formed over the conductivity modulating region at the protruding portion such that it covers the sides of the channel forming region and a portion of the top of the source region. A gate electrode is formed over the gate insulating film and a source electrode is formed over the channel forming region and the source region.

REFERENCES:
patent: 4546367 (1985-10-01), Schutten et al.
patent: 4611235 (1986-09-01), Bhagat
patent: 4641164 (1987-02-01), Dolny et al.
patent: 4680604 (1987-07-01), Nakagawa

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