Rf power amplifier with increased efficiency at low power

Details Rf power amplifier with increased efficiency at low power Rf power amplifier with increased efficiency at low power

1994-12-15

1996-10-22

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including gain control means

330284, 330285, H03G 330

Patent

active

055680941

ABSTRACT:
An apparatus and method is provided that uses a simple voltage ratio technique to supply specific voltages to a voltage variable attenuator, and the gates of a GaAs RF power amplifier in order to control the efficiency of the amplifier. The output of the power amplifier is sampled and then fed back to the variable voltage attenuator as a control signal. A ratio portion of the control signal is then used to control the gate biases of the power amplifier. When the power requirements are less than maximum, the voltage ratio will become more negative, resulting in less current. As the RF output increases, the voltage ratio will become more positive. Therefore, as the DC voltage varies, the power amplifier's output power will vary accordingly providing the desired output power with enhanced efficiency.

REFERENCES:
patent: 4646028 (1987-02-01), Palmer
patent: 5208550 (1993-05-01), Iwane
patent: 5241694 (1993-08-01), Vais/anen et al.
patent: 5250912 (1993-10-01), Fujita
patent: 5307512 (1994-08-01), Mitzlaff
patent: 5329249 (1994-07-01), Cripps

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