Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-06-07
1996-10-22
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257664, 257665, H01L 2348, H01L 2352, H01L 2940
Patent
active
055679889
ABSTRACT:
A polysilicon interconnect is formed on a microelectronic circuit substrate for conducting signals from a driver to a non-polycrystalline silicon contact which has higher impedance than the interconnect. A plurality of electronic "speed bumps" are spaced along the interconnect for disturbing or disrupting signals propagating along the interconnect toward the contact and thereby reducing undesirable back reflection and ringing. The speed bumps can include capacitance altering elements in the form of dielectric strips, or resistance altering elements in the form of low resistance doped areas or high resistance amorphous areas. The speed bumps can include first and second elements having different values of capacitance or resistance which are spaced along the interconnect in alternating relation.
REFERENCES:
patent: 3667008 (1972-05-01), Katnack
Pasch Nicholas F.
Rostoker Michael D.
Arroyo T. M.
Crane Sara W.
LSI Logic Corporation
LandOfFree
Integrated circuit interconnect structure with back reflection s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit interconnect structure with back reflection s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit interconnect structure with back reflection s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2360801