High power semiconductor diode

Details High power semiconductor diode High power semiconductor diode

1976-04-16

1978-05-09

James, Andrew J.

357 56, 357 58, H01L 2948, H01L 2956, H01L 2964

Patent

active

040890201

ABSTRACT:
A semiconductor diode consists of a low resistivity n conductivity type semiconductor substrate, a high resistivity n conductivity type semiconductor layer, formed on the surface of the substrate, a high resistivity p conductivity type semiconductor layer, whose thickness is smaller than the diffusion length of electrons, formed on the n conductivity type layer, a metal electrode forming a Schottky barrier contact with the p conductivity type layer, and an electrode forming an ohmic contact with the substrate.

REFERENCES:
patent: T944004 (1976-03-01), Altman et al.
patent: 3738877 (1973-06-01), Davisohn
patent: 3742317 (1973-06-01), Shao
patent: 3770606 (1973-11-01), Lepselter
patent: 3897275 (1975-07-01), Borrelo et al.
patent: 3907595 (1975-09-01), Lindmayer
RCA Engineer; Schottky Barrier Devices, by R. T. Sells, pp. 68 to 73, Jan. 18, 1972.
RCA Technical Notes; Gallium Arsenide Photoportion Semiconductor Device, by Carl Stocker RCA TN, No. 536, Mar., 1962 pp. 1 of 2 & 2 of 2.
P-N Schottky Hybrid Cold Cathode Diode, by C. A. Stolte et al., Applied Physics Letters, vol. 19 No. 11, Dec., 1971, pp. 497 and 498.

Affiliated with

Also associated with

Rating

High power semiconductor diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High power semiconductor diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power semiconductor diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2360725