Self-aligned cobalt silicide on MOS integrated circuits

Details Self-aligned cobalt silicide on MOS integrated circuits Self-aligned cobalt silicide on MOS integrated circuits

1995-06-07

1996-10-22

Maples, John S.

Fishing, trapping, and vermin destroying

437 41, 437247, 148DIG147, H01L 21441

Patent

active

055676510

ABSTRACT:
A method of forming cobalt silicide on source/drain regions and polysilicon gate areas of an MOS integrated circuit uses an improved technique to prevent unwanted oxidation of cobalt or growth of silicide on other areas of device. A thin titanium nitride (or titanium tungsten) film is deposited on top of a cobalt film following the steps of patterning the polysilicon gate, source/drain implant and sidewall oxide spacer deposition and etch. The titanium nitride film allows formation of defect-free cobalt silicide during an elevated-temperature anneal. Without the titanium nitride film, the cobalt is likely to oxidize and/or form cobalt silicide in unwanted regions of the device, which can cause device failure.

REFERENCES:
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4908331 (1990-03-01), Raaijmakers
patent: 4920073 (1990-04-01), Wei et al.
patent: 4923822 (1990-05-01), Wang et al.
patent: 5047367 (1991-09-01), Wei et al.
Wolf, S. "Silion Processing For the VLSI Era", vol. 2, Lattice Press, Sunset Beach, Calif, 1990, pp. 150-152 (no month).
Ghandhi et al., "VLSI Fabrication Principles", 1983 by John Wiley & Sons, Inc., USA, pp. 435-437 (no month).

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