Method of making a bipolar gate charge coupled device with clock

Details Method of making a bipolar gate charge coupled device with clock Method of making a bipolar gate charge coupled device with clock

1995-05-05

1996-10-22

Dang, Trung

Fishing, trapping, and vermin destroying

437 26, 437 27, 257247, H01L 2170

Patent

active

055676413

ABSTRACT:
The charge coupled device cell has a semiconductor layer 20 of a first conductivity type, a buried channel 22 of a second conductivity type on the semiconductor layer 20, a first virtual gate 24 in the buried channel 22, the first virtual gate is switched between at least two potential levels, and a first bipolar gate 42 in the buried channel 22 adjacent the first virtual gate 24.

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