Functional ZnSe:H deposited films

Details Functional ZnSe:H deposited films Functional ZnSe:H deposited films

1988-07-20

1989-07-25

Roy, Upendra

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

136264, 136265, 148DIG1, 357 2, 357 61, 357 63, 428620, 437 24, 437105, 437106, H01L 21265, H01L 21363

Patent

active

048513024

ABSTRACT:
There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is capable of efficient doping and is stable to irradiation. It can be made into a high conductivity p-type of n-type ZnSe:H:M film by doping. It can be efficiently deposited on a non-single crystal substrate such as metal, glass, and synthetic resin which was incapable of efficient depositing. Thus the invention makes it possible to form a high-functional device such as a photovoltaic element of ZnSe film on a non-single crystal substrate.

REFERENCES:
patent: 3670220 (1972-06-01), Kun et al.
patent: 3755002 (1973-08-01), Hirai et al.
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4632711 (1986-12-01), Fujita et al.
patent: 4735910 (1988-04-01), Mitsuyu et al.
patent: 4795501 (1989-01-01), Stanbery

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