Metalization process for headless contact using deposited smooth

Details Metalization process for headless contact using deposited smooth Metalization process for headless contact using deposited smooth

1984-08-30

1987-02-10

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 29590, 29577C, 148DIG19, 148DIG20, 148DIG45, H01L 21285

Patent

active

046414207

ABSTRACT:
Contacting an underlying region (e.g., doped silicon) through an access hole in an overlying dielectric layer (e.g., p-glass) formerly required flowing the dielectric to smooth the edges of the hole, so that aluminum would deposit smoothly into the hole. The present technique smoothes the side of the hole by forming a smoothing region on the sidewall. Improved aluminum coverage results, as well as allowing a smaller contact head, if desired. Improved contact resistance can be optionally provided by depositing a more conductive layer on the underlying layer prior to forming the sidewall.

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