Method of making an integrated circuit structure with self-align

Details Method of making an integrated circuit structure with self-align Method of making an integrated circuit structure with self-align

1985-03-04

1987-02-10

Hearn, N. E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29580, 148 15, 148171, 148188, 148DIG10, 148DIG50, 148DIG85, 148DIG117, H01L 21302, H01L 21265

Patent

active

046414169

ABSTRACT:
The invention comprises an improved integrated circuit structure wherein an active device is formed in a silicon substrate for forming an intrinsic base region over a buried collector and an emitter is formed on the intrinsic base region to comprise three electrodes of the active device and at least one extrinsic base segment is formed in the substrate adjacent to the intrinsic base region to provide a contact for the intrinsic base; the improvement which comprises: separating the extrinsic base segment from the emitter formed on the intrinsic base to prevent the formation of a parasitic P-N junction between the extrinsic base and the emitter.

REFERENCES:
patent: 4412378 (1983-11-01), Shinada
patent: 4418468 (1983-12-01), Vora et al.
Ghondi, ULSI Fabrication Principles Silicon and Gallium Arsenide, John Wiley and Sons, New York, 1983, pp. 160-163.

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