Method of making a trench MOSFET with multi-resistivity drain to

Details Method of making a trench MOSFET with multi-resistivity drain to Method of making a trench MOSFET with multi-resistivity drain to

1995-04-26

1997-10-07

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 81, 437108, 437110, 437112, 437DIG971, 257332, H01L 21265

Patent

active

056747667

ABSTRACT:
A MOSFET switch with a gate formed in a trench has a drain which includes a region of relatively high resistivity adjacent the trench and a region of relatively low resistivity further away from the trench. The drain may also include a "delta" layer having even lower resistivity in a central region of the MOSFET cell. The high resistivity region limits the strength of the electric field at the edge of the trench (particularly where there are any sharp corners) and thereby avoids damage to the gate oxide layer. The central "delta" layer helps to insure that any breakdown will occur near the center of the MOSFET cell, away from the gate oxide, and to lower the resistance of the MOSFET when it is in an on condition.

REFERENCES:
patent: 3956037 (1976-05-01), Ishii et al.
patent: 4528745 (1985-07-01), Muraoka et al.
patent: 4838993 (1989-06-01), Aoki et al.
patent: 4885260 (1989-12-01), Ban et al.
patent: 4893160 (1990-01-01), Blanchard
patent: 4894349 (1990-01-01), Saito et al.
patent: 4941026 (1990-07-01), Temple
patent: 5034785 (1991-07-01), Blanchard
patent: 5162256 (1992-11-01), Jurgensen
patent: 5168331 (1992-12-01), Yilmaz
patent: 5341011 (1994-08-01), Hshieh et al.
patent: 5432121 (1995-07-01), Chan et al.
patent: 5545586 (1996-08-01), Koh
Shenai, K.: "Optimized Trench MOSFET Technologies for Power Devices", IEEE Transactions on Electron Devices, Jun. 1992, USA, vol. 39, NR. 6, pp. 1435-1443, ISSN 0018-9383 XP000271790.

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