Fishing – trapping – and vermin destroying
Patent
1995-06-07
1997-10-07
Niebling, John
Fishing, trapping, and vermin destroying
437 43, H01L 21265, H01L 218247
Patent
active
056747640
ABSTRACT:
A non-volatile memory cell (10) is formed in the face of a layer of semiconductor (12) of a first conductivity type, and includes a first heavily doped diffused region (14) and a second heavily doped diffused region (16) formed in semiconductor layer (12) to be of a second conductivity type opposite the first conductivity type. First heavily doped diffused region (14) and second heavily doped diffused region (16) are spaced by a channel area (18). A first lightly doped diffused region (20) is formed adjacent first heavily doped diffused region (14) to be of the second conductivity type. A second lightly doped diffused region (22) is formed in semiconductor layer (12) adjacent second heavily doped diffused region (16) to be of the second conductivity type. A floating gate (24) insulatively overlies the channel area and insulatively overlies a selected one of lightly doped diffused regions (20,22). A control gate (30) insulatively overlies floating gate (24).
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Liu David K.
Wong Man
Booth Richard A.
Brady III W. James
Donaldson Richard L.
Matsil Ira S.
Niebling John
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