Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

Filed on

1990-09-17

Date issued

1992-04-14

Examiner

Epps, Georgia Y.

Patent Class

Coherent light generators

SubClass

Particular active media

SubSubClass

Semiconductor

Other Related Categories

372 45, H01S 310

Type

Patent

Status

active

Patent number

051054329

Description

ABSTRACT:
A visible light semiconductor laser device has a double heterojunction structure comprising AlGaInP series semiconductors which is produced on a substrate having an electrode on its rear surface. A p type GaInP buffer layer is provided between a p type GaAs contact layer and a p type AlGaInP cladding layer. The buffer layer has a constant composition ratio and the energy band gap is smaller at the p type GaAs contact layer than at the p type AlGaInP cladding layer. Thus, an energy discontinuity between the p type GaAs contact layer and the p type AlGaInP cladding layer are relaxed for operation of the laser at lower voltage.

REFERENCES:
patent: 4340966 (1982-07-01), Akiba et al.
A. Gomyo et al., "Evidence for the existence of an ordered state in Ga.sub.0.51 In.sub.0.5 P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy", Applied Physics Letters 50(11), Mar. 16, 1987, pp. 673-675.
K. Itaya et al., "A New Transverse-Mode Stabilized InGaAlP Visible Light Laser Diode Using p-p Isotype Hetero Barrier Blocking", Extended Abstracts of the 20th Conference on Solid State Devices and Materials, 1-1988, pp. 307-310.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2355347