Method of treating silicon nitride film formed by plasma deposit

Details Method of treating silicon nitride film formed by plasma deposit Method of treating silicon nitride film formed by plasma deposit

1985-09-09

1987-01-13

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 531, 427 541, 427 94, 20415715, B05D 306

Patent

active

046364005

ABSTRACT:
A method of treating a silicon nitride film formed by plasma deposition and deposited on a substrate, which comprises: (1) irradiating the silicon nitride film, and (2) heating the silicon nitride film during the irradiating.

REFERENCES:
patent: 4181751 (1980-01-01), Hall et al.
patent: 4229502 (1980-10-01), Wu et al.
patent: 4277320 (1981-07-01), Beguwala et al.
patent: 4469715 (1984-09-01), Madan
patent: 4495218 (1985-01-01), Azuma et al.

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