Semiconductor device

Details Semiconductor device Semiconductor device

1991-06-28

1992-04-14

Prenty, Mark

357 234, 357 19, H01L 2702, H01L 2910, H01L 3112

Patent

active

051052512

ABSTRACT:
A semiconductor of the present invention comprises first and second power MOS transistors of the same channel type, which are formed on the same semiconductor chip in a common drain, and means for supplying a control signal to each gate of these transistors. According to the above-mentioned structure, formation of one chip can be obtained by use of a common drain, thereby obtaining a switch member having high integration and high reliance.

REFERENCES:
patent: 5031009 (1991-07-01), Fujihara
patent: 5032880 (1991-07-01), Tsunoda

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