Driver for field effect transistor

Details Driver for field effect transistor Driver for field effect transistor

1991-02-01

1992-04-14

Wong, Peter S.

Electricity: power supply or regulation systems

Output level responsive

Using a three or more terminal semiconductive device as the...

323284, G05F 156

Patent

active

051051443

ABSTRACT:
An MOS FET pass element for a switching voltage regulator is driven by a dual voltage booster configuration. The pulse width modulator of the regulator provides a two-phase logic signal for alternately energizing and charging each booster. Each booster is comprised of a capacitor charged from a charging voltage source and coupled to the gate of the FET for providing a turn-on voltage thereto. A switching transistor associated with each booster alternately couples the associated booster capacitor to a predetermined voltage and to ground. The capacitors alternately provide the turn-on voltage to the FET when the predetermined voltage is applied thereto. On alternate half cycles, each capacitor is charged from the charging voltage source. The two-phase logic signal alternately renders the switching transistors conductive. A NAND gate responsive to the two-phase logic signal, permits the FET to be turned on by the voltage boosters only during the presence of each of the logic signals.

REFERENCES:
patent: 4420700 (1983-12-01), Fay et al.
patent: 4521725 (1985-06-01), Phaneuf
patent: 4553082 (1985-11-01), Nesler
patent: 4733159 (1988-03-01), Edwards et al.
patent: 4803612 (1989-02-01), Skovmand

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