T-type undercut electrical contact process on a semiconductor su

Details T-type undercut electrical contact process on a semiconductor su T-type undercut electrical contact process on a semiconductor su

1988-05-16

1990-05-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437177, 437179, 437192, 437947, 437985, 148DIG117, 148DIG131, 148DIG140, 357 22, 357 15, H01L 21283

Patent

active

049238272

ABSTRACT:
On a semiconductor substrate (38) T-type undercut electrical contact structure (12, 36) and methodology provides a diffusion barrier (26, 40) preventing migration therethrough from a gold layer (30, 48) along the sides of an undercut schottky metal lower layer (28, 44) into the active region of the semiconductor substrate. In one embodiment, the diffusion barrier (26) is provided at the base of the gold layer (30). In another embodiment, the gold layer (48) is encapsulated by the diffusion barrier (40) on the bottom (46) and sides (56). The diffusion barrier base layer is deposited. The diffusion barrier side layers are electroplated with the remaining portions of the contact structure being masked by selective oxidation.

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