Method of manufacturing semiconductor integrated circuit

Details Method of manufacturing semiconductor integrated circuit Method of manufacturing semiconductor integrated circuit

1990-12-14

1992-04-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437 31, 437 26, 437 34, 437 70, 437956, 437 74, 437 77, H01L 2102

Patent

active

051048299

ABSTRACT:
A semiconductor integrated circuit is manufactured in the following steps. A first silicon oxide film is formed on a silicon substrate. A silicon nitride film is formed on the first silicon oxide film. A second silicon oxide film is formed on the silicon nitride film. The second silicon oxide film is patterned by isotropic etching. The silicon nitride film is etched by using the patterned second silicon oxide film as a mask. A first region having one conductivity type is selectively formed in the silicon substrate by using the second silicon oxide film as a mask. An outer peripheral region of the second silicon oxide film is isotropically etched. The silicon nitride film is etched by using the second silicon oxide film, whose outer peripheral region is etched, as a mask. A third silicon oxide film is formed by a selective oxidation method using the remaining silicon nitride film as a mask. The silicon nitride film is removed. A second region having the other conductivity type is selectively formed in the silicon substrate by using the third silicon oxide film as a mask.

REFERENCES:
patent: 4516316 (1985-08-01), Haskell
patent: 4803179 (1989-02-01), Neppl et al.
patent: 4931406 (1990-06-01), Tomioka
patent: 4970174 (1990-11-01), Min et al.

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