Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1991-07-15

1992-04-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 148DIG5, H01L 2120

Patent

active

051048256

ABSTRACT:
A semiconductor device includes an InP substrate, an intrinsic InGaAs channel layer formed on the InP substrate and lattice matched to the InP substrate, a doped GaAsSb carrier supply layer formed on the intrinsic InGaAs channel layer and lattice matched to the InP substrate, a gate electrode formed on the doped GaAsSb carrier supply layer, and a source electrode and a drain electrode which are respectively formed on the doped GaAsSb carrier supply layer and located on both sides of the gate electrode.

REFERENCES:
patent: 4954457 (1990-09-01), Jambotkar
patent: 5023675 (1991-06-01), Ishikawa
patent: 5051371 (1991-09-01), Sasaki

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