Method of fabricating titanium silicide gate electrodes and inte

Details Method of fabricating titanium silicide gate electrodes and inte Method of fabricating titanium silicide gate electrodes and inte

1985-03-29

1987-01-13

Saba, William G.

Metal working

Method of mechanical manufacture

Electrical device making

29571, 29578, 148 15, 148187, 148DIG19, 148DIG147, 156643, 156653, 156657, 357 239, 427 88, 427 91, H01L 21283, H01L 2188

Patent

active

046353470

ABSTRACT:
A method for constructing titanium silicide integrated circuit gate electrodes and interconnections is disclosed. The method finds particularly useful applications in metal-oxide semiconductor integrated circuit fabrication. Following standard active and passive circuit component construction, a thin film of titanium is overlayed on the die structure covering thereby the pre-patterned polysilicon gates and interconnections. The die is then rapidly heated and baked to form a silicide layer superposing said polysilicon. The undesired titanium layer over other areas can be stripped using simple ammonium hydroxide/hydrogen etching and cleaning solution. Titanium silicide electrodes and interconnections are self-aligned and have a sheet resistance of 1 to 5 ohms per square.

REFERENCES:
patent: 3753774 (1973-08-01), Veloric
patent: 4080719 (1978-03-01), Wilting
patent: 4102733 (1978-07-01), De Lamoneda
patent: 4332839 (1982-06-01), Levinstein
patent: 4356040 (1982-10-01), Fu et al.
patent: 4443930 (1984-04-01), Hwang et al.
patent: 4458410 (1984-07-01), Sugaki et al.
patent: 4471524 (1984-09-01), Kinsbron et al.
patent: 4477310 (1984-10-01), Park et al.
patent: 4485550 (1984-12-01), Koeneke et al.
patent: 4510670 (1985-04-01), Schwabe et al
patent: 4528744 (1985-07-01), Shibata
Park et al., "Mo/Ti Bilayer Metallization-TiSi.sub.2 Process", J. Vac. Sci. Technol. A2(2) Apr.-Jun. 1984, pp. 259-263.
Jones et al, "Salicide with Buried Silicide Layer", I.B.M. Tech. Discl. Bull., vol. 27, No. 2, Jul. 1984, pp. 1044-1045.
Choi et al., "Improved Salicide Process-Silicide Formation", I.B.M. Tech. Discl. Bull., vol. 27, No. 7B, Dec. 1984, pp. 4402-4404.

Affiliated with

Also associated with

Rating

Method of fabricating titanium silicide gate electrodes and inte does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating titanium silicide gate electrodes and inte, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating titanium silicide gate electrodes and inte will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2347015