Process for manufacturing integrated circuits and metallic mesh

Details Process for manufacturing integrated circuits and metallic mesh Process for manufacturing integrated circuits and metallic mesh

1974-07-18

1976-01-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

156345, 204164, 252 791, B29C 1708, C23F 102

Patent

active

039309134

ABSTRACT:
A process step for use in the manufacture of thin film integrated circuits, hybrid circuits and fine metallic mesh screens, to enable the removal of all organics and photoresist material from underlying metallic films without concomitant degradation of the metallic surface. After etching of preselected portions of an underlying critical metallic surface, the material is exposed to a low pressure (few torr) rf generated "cold" plasma, where the plasma is a homogeneous gaseous mixture of oxygen and nitrogen.

REFERENCES:
patent: 3615956 (1971-10-01), Irving
patent: 3664899 (1972-05-01), Wright
patent: 3795557 (1974-03-01), Jacob
patent: 3806365 (1974-04-01), Jacob
patent: 3816196 (1974-06-01), LaCombe
patent: 3846166 (1974-11-01), Saiki et al.

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