Independently addressable laser array with native oxide for opti

Details Independently addressable laser array with native oxide for opti Independently addressable laser array with native oxide for opti

1997-08-29

2000-04-18

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 3085

Patent

active

060523999

ABSTRACT:
The present invention provides a high density, edge emitting laser array structure formed by a wet oxidation process. Native oxide layers formed in adjacent grooves in the p-cladding layer Al-based alloy of the laser array structure provide both optical confinement to achieve single transverse mode operation and for electrical isolation to allow each laser diode to be independently addressable.

REFERENCES:
patent: 5262360 (1993-11-01), Holonyak, Jr. et al.
patent: 5327448 (1994-07-01), Holonyak, Jr. et al.
patent: 5684819 (1997-11-01), Zirngibl
patent: 5729563 (1998-03-01), Wang et al.
patent: 5742631 (1998-04-01), Paoli
Cheng et al., "Lasing Characteristics of High-Performance Narrow-Stripe InGaAs-GaAs Quantum Well Lasers Confined by AlAs Native Oxide", IEEE Photonics Technology Letters, vol. 8, No. 2, Feb. 1996, pp. 176-178.
Carraci et al., "High-performance planar native-oxide buried-mesa index-guided AlGaAs-GaAs quantum well heterostructure lasers", Appl. Phys. Lett., vol. 61 (3), Jul. 20, 1992, pp. 321-323.

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