Method of forming composite interconnect system

Details Method of forming composite interconnect system Method of forming composite interconnect system

1992-05-26

1993-07-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437203, 437190, 437195, 148DIG25, H01L 2144

Patent

active

052310558

ABSTRACT:
A process for forming a smooth conformal refractory metal film on an insulating layer having a via formed therein. This process provides extremely good planarity and step coverage when used to form contacts in semiconductor circuits and, in addition, offers improved wafer alignment capability as well as enhanced reliability which result from the smooth surface morphology. The process includes forming contact openings through an insulating layer to a semiconductor substrate; depositing a first blanket layer of titanium using deposition conditions that provide a conformal film that exhibits good step coverage at the contact opening; and forming a second blanket layer of titanium using deposition conditions that provide reduced surface asperity height. The process is ideally suited to forming an electrical interconnection system for semiconductor integrated circuit devices such as static or dynamic random access memories and is particularly useful in VLSI devices that incorporate multiple levels of interconnect.

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Rosler et al., "Tungsten Chemical Vapor Deposition Characteristics Using SiH.sub.4 in a Single Wafer System", J. Vac. Sci. Tech. B6(6) Nov./Dec. 1988, pp. 1721-1727.

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