Method for formation of contact plugs utilizing etchback

Details Method for formation of contact plugs utilizing etchback Method for formation of contact plugs utilizing etchback

1991-10-01

1993-07-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 156651, H01L 2144

Patent

active

052310515

ABSTRACT:
An improved planarity when forming contact plugs by a blanket CVD deposition of a metallic matrix layer followed by etchback is achieved by performing a first etchback step to expose the surface of the dielectric material underlying the filling metal layer, while masking the top of the metal plugs with resist caps. The resist caps are formed using a mask derived by field inversion and enlargement from the actual contact mask used for defining the contact areas. With the resist caps covering the contact plugs, the filling metallic material is overetched to eliminate residues along with discontinuities from the planarity of the surface, while shielding the top of the plugs from the overetch. The masked overetch is preferably conducted under conditions of reduced anisotropy and increased selectivity in respect to the first etchback step.

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Paul E. Riley, et al., "Development of a Magnetron-Enhanced Plasma Process for Tungsten Etchback with Response-Surface Methodology", IEEE Transactions on Semiconductor Manufacturing vol. 3, No. 3: 142-144, 1990.
Jen-Jiang Lee et al., "A Study of Tungsten Etchback for Contact and Via Fill Application" IEEE V-MIC Conf., Jun. 15-16, 1987, Santa Clara, Calif.; pp. 193-199.

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