Method of producing field effect transistor

Details Method of producing field effect transistor Method of producing field effect transistor

1992-05-27

1993-07-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 44, 437 45, 437200, H01L 21265

Patent

active

052310388

ABSTRACT:
A field effect transistor including a gate electrode, a source electrode and a drain electrode which are formed on a major surface of a silicon substrate. An impurity contained in the source electrode and the drain electrode is diffused into the silicon substrate by heat treatment of thereby form source and drain areas of the transistor. The source electrode and the drain electrode are electrically insulated from the gate electrode by a side-wall insulating film. The side-wall insulating film and the gate insulating film are formed by separate steps, so can each be formed in optimum thickness.

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patent: 4992388 (1991-02-01), Pfiester
patent: 5008209 (1991-04-01), Appels et al.
patent: 5082794 (1992-01-01), Pfiester

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