Low moment/high coercivity pinned layer for magnetic tunnel junc

Details Low moment/high coercivity pinned layer for magnetic tunnel junc Low moment/high coercivity pinned layer for magnetic tunnel junc

1998-08-21

2000-04-18

Evans, Jefferson

Dynamic magnetic information storage or retrieval

Head

Hall effect

324252, G11B 539, G01R 3302

Patent

active

060522631

ABSTRACT:
A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor in magnetic disk drives or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a ferromagnetic antiparallel (AP)-pinned layer comprising a first ferromagnetic layer, a second ferromagnetic layer and an antiparallel coupling (APC) layer disposed between the first and second ferromagnetic layers, a free ferromagnetic layer and an insulating tunnel barrier layer disposed between the first ferromagnetic layer of the AP-pinned layer and the free ferromagnetic layer. The magnetization of the AP-pinned layer is oriented in the plane of the layer but is fixed so as not to be able to rotate in the presence of an applied magnetic field in the range of interest. The magnetization of the free ferromagnetic layer is able to be rotated in the plane of the layer relative to the fixed magnetization of the ferromagnetic AP-pinned layer. The second ferromagnetic layer of the AP-pinned layer is formed of a high coercivity magnetic material which fixes the magnetization direction of the AP-pinned layer in a direction perpendicular to the air bearing surface. The net magnetic moment of the AP-pinned layer is made to be near zero to minimize magnetostatic interaction of the AP-pinned layer with the free layer.

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