Method of reducing carbon incorporation into films produced by c

Details Method of reducing carbon incorporation into films produced by c Method of reducing carbon incorporation into films produced by c

1994-09-01

1996-01-02

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

427530, 4272551, 4272552, 4272557, 427255, C23C 1414, C23C 1448

Patent

active

054806844

ABSTRACT:
A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organometallic precursor includes, a) positioning a wafer within a chemical vapor deposition reactor; b) injecting an organometallic precursor and a carrier gas to within the reactor having the wafer positioned therein; c) maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a layer of material onto the wafer which incorporates metal and carbon from the organometallic precursor; d) after depositing the layer of material, ion implanting a late transition metal into the layer to a selected dose; and e) after ion implanting, annealing the layer in the presence of a hydrogen source gas which effectively diffuses into the layer, hydrogen atoms of the hydrogen source gas being catalyzed by the late transition metal within the layer into hydrogen radicals, the hydrogen radicals reacting with carbon in the layer to produce gaseous products which diffuse outwardly of the wafer and are expelled from the reactor.

REFERENCES:
patent: 5320878 (1994-06-01), Maya
J. R. Conrad et al., "Ion Beam Assisted Coating and Surface Modification with Plasma Source Ion Implantation", J. Vac. Sci. Technol. A 8 (4), Jul./Aug. 1990 pp. 3146-3151.
Niemer et al., "Organometallic Chemical Vapor Deposition of Tungsten Metal, and Suppression of Carbon Incorporation by Codeposition of Platinum," Annl. Phys. Lett. 61 (15) Oct. 1992 pp. 1793-1795.

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