Semiconductor device having a semiconductor substrate with a hig

Details Semiconductor device having a semiconductor substrate with a hig Semiconductor device having a semiconductor substrate with a hig

1986-08-15

1988-07-05

Carroll, J.

357 231, 357 2311, 357 56, 357 59, 357 89, 357 90, H01L 2978, H01L 2712, H01L 2904, H01L 2906

Patent

active

047558636

ABSTRACT:
A high-performance, high-integration, and a highly reliable semiconductor device has a semiconductor substrate, an element isolation layer of an insulating material which is formed on the semiconductor substrate, a monocrystalline semiconductor layer formed on the portion of the semiconductor substrate and isolated from the element isolation layer, and a semiconductor element formed in the monocrystalline semiconductor layer. The impurity concentration of at least the surface region of the semiconductor substrate which is covered with the element isolation layer is not less than 10.sup.16 /cm.sup.3.

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