Bias-free symmetric dual spin valve giant magnetoresistance tran

Details Bias-free symmetric dual spin valve giant magnetoresistance tran Bias-free symmetric dual spin valve giant magnetoresistance tran

1996-08-26

1998-01-06

Berhane, Adolf

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

32420721, 360113, H01L 4300, G01B 714, G01B 537

Patent

active

057059730

ABSTRACT:
A giant magnetoresistive dual spin valve sensor employs at least one magnetic biasing layer located adjacent to an antiferromagnetic layer in the spin valve structure which includes two pinned ferromagnetic layers. The antiferromagnetic layer simultaneously pins the biasing layer and the ferromagnetic layer nearest the antiferromagnetic layer. This structure eliminates the bias point offset present in prior dual spin valve sensors.

REFERENCES:
patent: 4949039 (1990-08-01), Grunberg
patent: 5018038 (1991-05-01), Nakanishi
patent: 5287238 (1994-02-01), Baumgart et al.
patent: 5475304 (1995-12-01), Prinz
patent: 5508867 (1996-04-01), Cain et al.
patent: 5546253 (1996-08-01), Che
patent: 5583725 (1996-12-01), Coffey et al.
patent: 5600297 (1997-02-01), Ruigrok et al.

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