Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1995-05-16
1996-08-20
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257587, 257592, H01L 29161, H01L 29205
Patent
active
055481418
ABSTRACT:
A method of self aligning an emitter contact includes forming a base layer (18) on a portion of a collector layer (16). An interface layer (22) is formed on the base layer (18) such that a portion of the base layer (18) remains exposed. An emitter layer (24) is formed on the collector layer (16), the interface layer (22), and the exposed portion of the base layer (18). An emitter cap layer (26) is formed on the emitter layer (24) over the previously exposed area of the base layer (18). An insulating layer (28) is formed on the interface layer (22). An emitter contact (36) is formed on the emitter cap layer (26) at the previously exposed area of the base layer (18). The insulating layer (28) isolates the emitter contact (36) from the base layer (18) and a subsequently formed base contact (38). The insulating layer (28) ensures isolation between the emitter contact (36) and the base contact (38) despite misalignment of the emitter contact (36) during formation.
REFERENCES:
patent: 4751195 (1988-06-01), Kawai
patent: 4948751 (1990-08-01), Okamoto et al.
patent: 4954457 (1990-09-01), Jambotkar
patent: 5064772 (1991-11-01), Jambotkar
patent: 5068756 (1991-11-01), Morris et al.
patent: 5077231 (1991-12-01), Plumton et al.
patent: 5166081 (1992-11-01), Inada et al.
patent: 5323032 (1994-06-01), Sato et al.
Kimiyoshi Yamasaki, et al., "GaAs LSI-Directed MESFET's With Self-Aligned Implantation for N+ -Layer Technology(SAINT)", IEEE Transactions on Electron Devices, vol. ED-29, No. 11, Nov. 1982, pp. 1772-1777.
Shin-Ichi Shikata, et al., "A Novel Self-Aligned Gate Process for Half-Micrometer Gate GaAs IC's Using ECR-CVD", IEEE Transactions on Electron Devices, vol. 37, No. 8, Aug. 1990, pp. 1800-1803.
Morris Francis J.
Plumton Donald L.
Yang Jau-Yuann
Yuan Han-Tzong
Donaldson Richard L.
Kesterson James C.
Monin, Jr. Donald L.
Skrehot Michael K.
Texas Instruments Incorporated
LandOfFree
Bipolar transistor having a self emitter contact aligned does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bipolar transistor having a self emitter contact aligned, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor having a self emitter contact aligned will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2332040