Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-06-07
1996-08-20
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 86, 257 94, 257 97, 257102, H01L 29161
Patent
active
055481272
ABSTRACT:
In a light emitting device made of a group II-VI semiconductor, a P-type interface film including one or two layers is formed between the positive electrode and the uppermost P-type layer of the group II-VI semiconductor film, to make the energy band increase in steps from the electrode to the semiconductor film, thereby realizing a structure where the current flows at a low voltage. The II-VI semiconductor film is MBE-grown at a substrate temperature of 350.degree. C. or below. The P-type interface film is formed to have a carrier concentration of 10.sup.19 /cm.sup.3 or above by MBE growth at a substrate temperature lower than or equal to the substrate temperature at which the semiconductor film is formed.
REFERENCES:
patent: 4719497 (1988-01-01), Tsai
patent: 5371756 (1994-12-01), Fujii
Gallium Arsnide and Related Compounds 1991, No. 120, 9-12 Sep. 1991, pp. 9-16 M. A. Hasse et al. "Short wavelength II-VI laser diodes" p. 11 paragraph 2-p. 12; Figures 1, 2.
Rohm & Co., Ltd.
Wojciechowicz Edward
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