Resonant tunneling bipolar transistor

Details Resonant tunneling bipolar transistor Resonant tunneling bipolar transistor

1995-08-30

1998-01-06

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257197, 257198, H01L 2915, H01L 29737

Patent

active

057058253

ABSTRACT:
Excellent negative resistance characteristics are attained in a resonant bipolar transistor (RBT) while improving current gain. A first conduction type collector layers and the opposite conduction type base layer are sequentially formed on a semiconductor substrate. A quantum well structure in which a quantum level of electrons or holes is generated, and a contact layer of the same conduction type as the base layer are sequentially formed on a part of the base layer. An emitter layer of the same conduction type as the collector layer is formed directly on another part of the base. Since good negative resistance characteristics can be attained by utilizing the resonant tunneling effect of base majority carriers, and the quantum well structure causing carrier accumulation can be eliminated from the path of carriers flowing between the emitter and the collector, it is possible to reduce the recombination current at the emitter-base interface and in the quantum well structure, thereby improving current gain.

REFERENCES:
patent: 5428224 (1995-06-01), Hayashi et al.
F. Capasso et al., "Quantum-Well Resonant Tunneling Bipolar Transistor Operating at Room Temperature", IEEE Electron Device Letters, vol. EDL-7, No. 10, Oct. 1986, pp. 573-576.

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