Method of fabricating a self-aligned contact using a liquid-phas

Details Method of fabricating a self-aligned contact using a liquid-phas Method of fabricating a self-aligned contact using a liquid-phas

1995-05-26

1996-08-20

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437984, 437193, H01L 2128

Patent

active

055479006

ABSTRACT:
This invention provides a method of fabricating a self-aligned contact of a semiconductor device using a liquid-phase oxide-deposition (LPD) process. A gate electrode and source/drain regions are formed on a semiconductor substrate. A layer of photoresist is coated and patterned overlying an area of the semiconductor substrate that will form a contact. Using the photoresist as a mask, an oxide layer is formed in self-aligned manner by a liquid-phase deposition process. The photoresist is removed to expose a contact portion of the source/drain regions. An interlevel conductive layer is formed on the semiconductor substrate, wherein the interlevel conductive layer is connected to the source/drain regions through the contact portion.

REFERENCES:
patent: 5270233 (1993-12-01), Hamatake
patent: 5286664 (1994-02-01), Horiuchi
patent: 5304510 (1994-04-01), Suguro et al.
patent: 5378654 (1995-01-01), Hsue
patent: 5429956 (1995-07-01), Shell et al.
S. Wolf "VLSI Processing for the VLSI Era, vol. I", Lattice Press, pp. 384, 385, 1986.

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