Direct etch for thin film resistor using a hard mask

Fishing – trapping – and vermin destroying

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437918, 148DIG136, 216 16, H01L 2170

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055478964

ABSTRACT:
In a method of etching a thin film resistor material, such as NiCr or CrSi, and of producing a thin film resistor, a non-photoresist hard mask is deposited on an exposed surface of thin film resistor material, a delineated portion of the hard mask is etched with a hydrogen peroxide etchant that does not affect the thin film resistor material to expose the material therebeneath, and the exposed thin film resistor material is etched with a second etchant that does not affect the hard mask. The second etchant may be sulfuric acid heated to greater than 125.degree. C. for NiCr or a mixture of phosphoric acid, nitric acid and hydrofluoric acid for CrSi. The hard mask preferably comprises TiW.

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S. Wolf, "Silicon Processing For the VLSI Era, vol. 1", Lattice Press (1986), pp. 335 and 367.

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