Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1994-12-06

1996-08-20

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 34, 437 59, 437 62, 437974, 148DIG126, 148DIG135, H01L 2170

Patent

active

055478867

ABSTRACT:
In an SOI substrate including a single-crystal Si substrate (1b), an oxide film (20) and a single-crystal Si substrate (1a), there is formed an stepped wall surface (8) by selective removal of the single-crystal Si substrate (1a) to provide a thick oxide film (5) on the stepped wall surface (8). When a VDMOS (100) is formed in an active region of the single-crystal Si substrate (1b) above which the single-crystal Si substrate (1a) is absent and an MOS (101) having a thin oxide film (22) is formed in the single-crystal Si substrate (1a), the oxide film (5) is not damaged because it is thick. The thickness of the single-crystal Si substrate (1a) enables to be designed in accordance with the required thickness of the MOS (101).

REFERENCES:
patent: 4570330 (1986-02-01), Cogan
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patent: 4948748 (1990-08-01), Kitahara et al.
patent: 4963505 (1990-10-01), Fuji et al.
patent: 5166082 (1992-11-01), Nakamura et al.
patent: 5223450 (1993-06-01), Fujino et al.
IBM Technical Disclosure Bulletine, vol. 27, No. 12, May 1985, pp. 6968-6970, "CMOS Semiconductor Structure Without Latch-Up and Method of Fabrication Therefore".

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