Staircase bandgap photodetector using recombination

Details Staircase bandgap photodetector using recombination Staircase bandgap photodetector using recombination

1991-05-13

1993-04-27

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257 21, 257290, 257432, H01L 310304

Patent

active

052065260

ABSTRACT:
Disclosed are novel fast semiconductor photodetector means that comprise a good asymmetric superlattice structure. Associated with the material of the structure is a relatively short minority carrier effective lifetime .tau..sub.e, typically .tau..sub.e <10.sup.-9 sec. In response to a constant photon flux of appropriate wavelength the photodetector can have a substantially constant voltage output that is proportional to the photon flux for small values of flux, and that saturates at a value that is substantially proportional to .tau..sub.e.sup.-1 for relatively large values of flux. The novel photodetector means can be advantageously combined with a FET or bipolar transistor, and the combination can be part of an integrated circuit.

REFERENCES:
patent: 4694318 (1987-09-01), Capasso et al.
patent: 4974044 (1990-11-01), Cunningham et al.
patent: 5051804 (1991-09-01), Morse et al.
patent: 5075743 (1991-12-01), Behfar-Rad
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"Measurement of High-Speed Signals in Solid State Devices", by R. B. Marcus (editor), Semiconductors and Semimetals, pp. 85-98.
"Picosecond Photoconductivity in Radiation-Damaged Silicon-on-Sapphire Films", by P. R. Smith et al., Applied Physics Letters, vol. 38 (1), Jan. 1, 1981, pp. 47-50.
"High Speed, Ion Bombarded InGaAs Photoconductors", by P. M. Downey et al., Applied Physics Letters, vol. 46 (4), Feb. 15, 1985, pp. 396-398.
"Room-Temperature Photopumped Operation of an InGaAs-InP Vertical Cavity Surface-Emitting Laser", by D. G. Deppe et al., Applied Physics Letters, vol. 56 (22), May 28, 1990, pp. 2172-2174.

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