Pass gate with low transistor junction breakdown susceptibility

Details Pass gate with low transistor junction breakdown susceptibility Pass gate with low transistor junction breakdown susceptibility

1987-05-01

1989-05-16

Hecker, Stuart N.

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

307578, 365203, 365182, G11C 700, H03K 17687

Patent

active

048315966

ABSTRACT:
A pass circuit (54) passes a boot signal through a first transistor (60) when the pass circuit (54) is selected by a select signal (106). A second transistor (100) is precharged prior to receiving the select signal (106). In response to the select signal (106), a high voltage is passed to the first transistor (60) and the voltage at the gate of the second transistor (100) is pulled above a high voltage. After a delay period, another transistor (88) conducts between the gate of the second transistor (100) and V.sub.cc, to discharge the gate voltage. With both the source and gate of the second transistor (100) at a high voltage, the second transistor (100) is put in a non-conducting state. As the boot signal passes through the first transistor (60), the gate voltage of the first transistor (60) is increased above a high voltage, but the voltage at the gate of the second transistor (100) is maintained at V.sub.CC, thus preventing junction breakdown.

REFERENCES:
patent: 4267464 (1981-05-01), Takomae et al.
patent: 4381460 (1983-04-01), Menachem
patent: 4508978 (1985-04-01), Reddy
patent: 4618786 (1986-10-01), Johnson
patent: 4638182 (1987-01-01), Mc Adams

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