Vapor depositing method

Details Vapor depositing method Vapor depositing method

1995-01-31

1998-01-06

Lusignan, Michael

Coating processes

Coating by vapor, gas, or smoke

427586, 117 86, 117 92, 117 93, 117103, 117108, C30B 2300, C23C 1600

Patent

active

057052247

ABSTRACT:
A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.

REFERENCES:
patent: 5443033 (1995-08-01), Nishizawa et al.
Mechanism & Application of Laser Atomic Layer Epitaxy of GaAs, Y. Aoyagi et al, Chemtronics, 1989, pp. 117 through 122 no month.
GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser, Yoshito Kawakyu et al, Japan App. Physics vol. 28 (8) 1989, pp. 1439-1441 no month.
Study of the Early State of Photochemical Vapor Deposition of Amorphous Silicon from Disilane on a SiO2 Substrate, Mitsuo Kawasaki et al, Japan App. Physics vol. 64(6) 1988, pp. 3254-3262 no month.
Doi et al., "Growth of GaAs by switched laser metalorganic vapor phase epitaxy", Appl. Phys. Lett. 48 (26) Jun. 30, 1986.

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