Trench isolation process

Details Trench isolation process Trench isolation process

1989-06-08

1993-04-27

Quach, T. N.

Fishing, trapping, and vermin destroying

437 26, 437 31, 437 57, 437 65, 437 67, 148DIG151, H01L 21302, H01L 21328, H01L 21334

Patent

active

052061825

ABSTRACT:
A trench isolation process for bipolar and/or MOS circuits employs trench isolation with the trenches extending from an isolation region just below the surface down to and through a buried layer having the same dopant polarity as the isolation regions, so that inversion along the sidewalls of the trench is prevented.

REFERENCES:
patent: 4137109 (1979-01-01), Aiken et al.
patent: 4264382 (1981-04-01), Anantha et al.
patent: 4299024 (1981-11-01), Diotrowski
patent: 4333227 (1982-06-01), Horng et al.
patent: 4688314 (1987-08-01), Weinberg et al.
patent: 4704368 (1987-11-01), Goth et al.
patent: 4719185 (1988-01-01), Goth
patent: 4808548 (1989-02-01), Thomas et al.
patent: 4818720 (1989-04-01), Iwasaki
patent: 4824797 (1989-04-01), Goth
patent: 4871685 (1989-10-01), Taka et al.
patent: 5066602 (1991-11-01), Takemoto et al.
Wolf, S., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, 1986, pp. 295-308.

Affiliated with

Also associated with

Rating

Trench isolation process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Trench isolation process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench isolation process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2326776